PART |
Description |
Maker |
ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|甲一(c)|63AB
|
Hynix Semiconductor, Inc.
|
FGA25N120 FGA25N120AN FGA25N120ANTU |
Discrete, NPT IGBT TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A
|
FAIRCHILD[Fairchild Semiconductor]
|
IRGC49B120UB |
1200 V, N-CHANNEL IGBT TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|芯片 IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
IRGPC50K |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 52A I(C) | TO-247AC
|
|
IRGC100B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展|芯片
|
Belden, Inc.
|
OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084 30V N-Channel PowerTrench MOSFET
|
|
IXGH40N30BD1S |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 60A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 300V五(巴西)国际消费电子展|0A条(c)的|47SMD
|
IXYS, Corp.
|
ITS08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
FF300R12KF2 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 300A I(C) | M:HL093HW060 晶体管| IGBT的|正陈|双| 1.2KV五(巴西)国际消费电子展| 300一(c)|米:HL093HW060
|
Infineon Technologies AG
|